Semiconductor device and method for manufacturing the same

ABSTRACT

In a face-down mount type of semiconductor device and a method of manufacturing the same, an external connection pad (6) of a circuit board (2) and a conductive bump (3) of a semiconductor chip (1) are coupled to each other, and thermoplastic resin (7) and curable resin (5) are filled into a gap (11) between the semiconductor chip (1) and the circuit board (2).

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device for use inelectronic equipment, and a method for manufacturing the same, and moreparticularly to a semiconductor device which is improved in repairperformance in a process for mounting a semiconductor chip on a circuitboard based on a face-down system.

2. Description of the Related Art

In a face-down type semiconductor device as described above, as shown inFIG. 1, a projecting conductive bump 3 is formed at an externalconnection pad of a semiconductor chip 1, and a predetermined amount ofliquefied thermosetting resin or liquefied photocurable or photosettingresin is coated at the center of a mount portion of the semiconductorchip of a circuit board 2. Thereafter, the conductive bump of thesemiconductor chip 1 and an external connection pad 6 of the circuitboard 2 are positioned to be positionally matched with each other. Inthe case of the thermosetting resin, the semiconductor chip is heatedwhile the circuit board 3 is pressed to the semiconductor chip, and thethermosetting resin 5 is hardened, thereby coupling or joining thesemiconductor chip 1 and the circuit board 2.

Further, in the case of the photocurable resin, after the semiconductorchip 1 and the circuit board 2 are positioned, the semiconductor chip 1is pressed against the circuit board 2, and ultraviolet ray isirradiated to harden the photocurable resin, thereby coupling thesemiconductor chip 1 and the circuit board 2.

Still further, Japanese Patent Application Laid-open No. Hei-5-6919discloses a method (flip chip bonding method) for constructing this typeof semiconductor device by using two types of resin. According to thismethod, a semiconductor chip is covered from the upper surface side ofthe semiconductor chip by an elastic member which is larger in size thanthe semiconductor chip, and the elastic member is fixed to a circuitboard by thermoplastic resin to temporarily mount the semiconductor chipon the circuit board while the semiconductor chip is pressed and fixedonto the circuit board. Thereafter, photocurable resin is filled intothe elastic member and sealed.

In a method of manufacturing a semiconductor device as shown in JapanesePatent Application Laid-open No. Hei-6-21117, a small amount ofliquefied resin is transferred and supplied to the center of the chip byusing a transfer method to temporarily fix the semiconductor chip to thecircuit board by the resin, and then the same kind of liquefied resin issupplied to harden the resin and perfectly seal the semiconductor chipand the circuit board with the resin. In the case of this technique, theresin is filled into the gap between the circuit board or wiring boardand the semiconductor chip and hardened.

In the semiconductor device as described above, the semiconductor chipand the circuit board are coupled to each other by using the hardeningaction of the sealing resin. In addition to the above type ofsemiconductor device, there is known another type of semiconductordevice in which a conductive bump formed on a semiconductor chip and aconnection pad of a circuit board are coupled to each other by solder,and then liquefied sealing resin is filled into the gap between thesemiconductor chip and the circuit board and hardened. Such a type ofsemiconductor device is shown in FIG. 2 in which the conductive bump 3of the semiconductor chip and the external connection pad 6 of thecircuit board are connected to each other through solder 4.

A first problem of the above conventional technique is as follows. Sincethis type of semiconductor device uses thermosetting resin, repaircannot be performed when a semiconductor chip is recognized as adefective after the semiconductor chip and the circuit board are coupledto each other by hardening the resin.

In this type of semiconductor device, the semiconductor chip and thecircuit board are adhesively attached to each other by hardeningthermosetting resin or ultraviolet-ray curable resin, and electricallyconnected to each other as shown in FIGS. 1 and 2. Accordingly, evenwhen the semiconductor chip is subsequently checked and judged as adefective, it is difficult to peel off the semiconductor chip togetherwith the hardened thermosetting resin or the ultraviolet-ray curableresin without damaging the circuit board.

A second problem is as follows. According to the method disclosed inJapanese Patent Application Laid-open No. Hei-5-6919, the repair workcan be performed after the semiconductor chip and the circuit board aretemporarily fixed to each other. However, since the elastic member mustbe used in the semiconductor device so as to cover the semiconductorchip, it is impossible to design this type of semiconductor device incompact size and light weight, and high-density mounting is alsoimpossible.

This is because the elastic member which is used for the temporaryfixing is larger than the semiconductor chip and thus other parts cannotbe mounted at the portion covered by the elastic member. Further, sincethe elastic member covers the semiconductor chip, the thickness of theelastic member increases the thickness of the semiconductor device.

A third problem is as follows. In the case of the method disclosed inJapanese Patent Application Laid-open No. Hei-6-21117, the resin isfilled into the gap between the semiconductor chip and the circuit boardand then hardened. This publication describes that a small amount ofresin is first used to temporarily fix the semiconductor chip and thecircuit board to each other and thus the semiconductor chip can beeasily removed when the semiconductor chip is judged as a defective.However, this method uses curable (thermosetting or ultraviolet-raycurable) resin, and thus the repair work cannot be well performed.

The reason is as follows. Since the curable resin is used for thetemporary fixing, the material of the curable resin is proximate to thematerial of the circuit board, and thus adhesion of the curable resin tothe circuit board is good even when the amount of the resin is small.Therefore, when the semiconductor chip is removed from the circuitboard, it is necessary to scrape the resin from the circuit board, sothat the circuit board may be damaged.

A fourth problem is as follows. In this type of semiconductor device,the gap between the semiconductor chip and the circuit board is sealedby the resin. Particularly when the thermosetting resin is used, voidsare formed in the sealing resin, and reliability of the semiconductordevice is lowered.

The reason is as follows. Since the semiconductor chip is heated to ahigh temperature and the resin on the circuit board is rapidly heatedand hardened by the heat of the semiconductor chip, residual solvent andmonomers of low molecular weight in the resin are vaporized and remainin the hardened resin.

Further, in the case where the ultraviolet-ray curable resin is used,the process of heating the semiconductor chip to harden the resin is notneeded. However, the ultraviolet ray is irradiated from the side surfaceto harden the resin while the semiconductor chip is pressed against thecircuit board, and thus the ultraviolet ray is not sufficiently incidentto the gap between the semiconductor chip and the circuit board becausethe gap is equal to several tens micrometers, so that hardening becomesinsufficient. Accordingly, only a transparent glass substrate is usableas the circuit board. Therefore, this method is limited to a specificapplication, and it is unsuitable to general purposes.

A fifth problem is as follows. The external connection bump of thesemiconductor chip which is electrically connected to the circuit boardand the external connection pad of the circuit board are electricallyconnected while merely brought into contact with each other. Therefore,when a temperature cycle test is performed, it may be difficult tomaintain the electrical connection between the semiconductor chip andthe circuit board at a high temperature.

A sixth problem is as follows. The conductive bump of the semiconductorchip and the connection pad of the circuit board are connected to eachother by only the solder. Therefore, when the sealing resin is filledinto the gap between the semiconductor chip and the circuit board,cracks may occur in the solder during the resin sealing process and theresin hardening process. As described above, the conductive bump of thesemiconductor chip and the connection pad of the circuit board arecoupled by only the solder. In this case, the semiconductor chip isheated to about 250° C. to melt the solder formed on the connection padof the circuit board, thereby coupling the semiconductor chip and thecircuit board. In this case, however, in the cooling progress of thechip, cracks occur in the coupling portion of the solder by stresses dueto the difference in thermal expansion coefficient between the circuitboard and the semiconductor chip and by impacts due to handling duringthe period from the mount step to the resin sealing step.

SUMMARY OF THE INVENTION

An object of the present invention is to improve the problems of theprior art as described above, and to provide a face-down typesemiconductor device in which repair can be easily performed when it isidentified as a defective after a semiconductor chip is mounted on acircuit a board and then subjected to a check test, and also no voidoccurs in sealing resin.

Further, in order to enhance reliability to connection, another objectof the present invention is to provide a semiconductor device havinghigh reliability in which a conductive bump of a semiconductor chip andan external connection pad of a circuit board are coupled to each otherby solder.

In order to attain the above objects, according to a first aspect of thepresent invention, there is provided a face-down mount type ofsemiconductor device in which an external connection pad of a circuitboard and a conductive bump of a semiconductor chip are coupled to eachother, wherein thermoplastic resin and curable resin are filled in a gapbetween the semiconductor chip and the circuit board.

In the face-down mount type of semiconductor device, the thermoplasticresin to adhesively connect the semiconductor chip and the circuit boardto each other are preferably filled in the neighborhood of the centerportion of the gap between the semiconductor chip and the circuit board,and the curable resin to adhesively connect the semiconductor chip andthe circuit board to each other is filled around the thermoplasticresin.

The conductive bump of the semiconductor chip and the externalconnection pad of the circuit board can be connected to each otherthrough solder. In this case, glass transition point of thethermoplastic resin is preferably higher than melting point of thesolder.

In order to attain the above objects, according to a second aspect ofthe present invention, there is provided a method for manufacturing aface-down mount type of semiconductor device, comprising:

a step of putting on a circuit board a thermoplastic resin member whoseamount is set so as to cover a desired area of a substantially centralportion of a semiconductor chip;

a step of positioning a conductive bump of the semiconductor chip and aconnection pad of the circuit board so that the conductive bump and theconnection pad are positionally coincident with each other;

a step of heating the semiconductor chip to melt the thermoplastic resinmember and pressing the semiconductor chip to the circuit board toelectrically connect the circuit board and the semiconductor chip toeach other; and

a step of filling curable resin into a space having no thermoplasticresin filled therein in a gap between the circuit board and thesemiconductor chip and supplying energy to the curable resin to cure thecurable resin.

In order to attain the above objects, according to a third aspect of thepresent invention, there is provided a method for manufacturing aface-down mount type of semiconductor device, comprising:

a step of putting on a circuit board a thermoplastic resin member whoseamount is set so as to cover a desired area of a substantially centralportion of a semiconductor chip;

a step of positioning a conductive bump of the semiconductor chip and aconnection pad of the circuit board which is coated with solder so thatthe conductive bump and the connection pad are positionally coincidentwith each other;

a step of heating the semiconductor chip to melt the thermoplastic resinmember and the solder coated on the connection pad and pressing thesemiconductor chip to the circuit board to electrically connect thecircuit board and the semiconductor chip to each other through thesolder; and

a step of filling curable resin into a space having no thermoplasticresin filled therein in a gap between the circuit board and thesemiconductor chip and supplying energy to the curable resin to cure thecurable resin.

In this method for manufacturing a face-down mount type of semiconductordevice, glass transition point of the thermoplastic resin is preferablyhigher than melting point of the solder.

The semiconductor device and the semiconductor device manufacturingmethod of the present invention utilize the above technical feature. Inthe conventional face-down type semiconductor device, the semiconductorchip and the circuit board are adhesively attached to each other andelectrically coupled to each other by hardening the resin which is putbetween the semiconductor chip and the circuit board. Accordingly, sincethe curable resin is used, it is difficult to remove the semiconductorchip when the semiconductor chip is afterwards judged as a defective.However, according to the semiconductor device and the semiconductordevice manufacturing method of the present invention, thermoplasticresin is used as temporarily fixing resin, and it is melted totemporarily couple the semiconductor chip and the circuit board to eachother. When the semiconductor chip is judged as a defective in asubsequent check test, the semiconductor chip is heated to a temperaturewhich is higher than the melting point or more of the thermoplasticresin to thereby easily remove the defective semiconductor chip from thecircuit board.

Further, in the conventional semiconductor device, the curable resin isquickly heated and voids occur in the sealing resin, so that thereliability of the semiconductor device is lowered. However, in thesemiconductor device of the present invention, the thermoplastic resinis located at the central portion of the semiconductor chip, and thus novoid occurs and resin sealing can be performed with high reliability.

Still further, in the semiconductor device in which the semiconductorchip and the circuit board are connected to each other by the solder,the thermoplastic resin is located at the center of the semiconductorchip in the soldering process to temporarily fix the semiconductordevice and the circuit board. Therefore, the impact at the handling andthe stress due to the difference in thermal expansion coefficientbetween the semiconductor chip and the circuit board can be moderated.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view showing the construction of aconventional semiconductor device;

FIG. 2 is a cross-sectional view showing the construction of anotherconventional semiconductor device;

FIG. 3 is a cross-sectional view showing the construction of a firstembodiment of a semiconductor device according to the present invention;

FIG. 4 is a cross-sectional view showing the construction of a secondembodiment of the semiconductor device according to the presentinvention;

FIGS. 5A to 5D are cross-sectional views showing a semiconductor deviceto explain a manufacturing method of the first, embodiment of thepresent invention in a step order; and

FIGS. 6A to 6D are cross-sectional view showing the semiconductor deviceto explain a manufacturing method of the second embodiment of thepresent invention in a step order.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Preferred embodiments according to the present invention will bedescribed hereunder with reference to the accompanying drawings. Thespecific construction of the semiconductor device and the semiconductordevice manufacturing method according to the present invention will bedescribed in detail.

FIG. 3 is a cross-sectional view showing the construction of thesemiconductor device according to the present invention, and shows aface-down type of semiconductor device 10 in which an externalconnection pad 6 of a circuit board 2 and a conductive bump 3 of asemiconductor chip 1 are coupled to each other in which thermoplasticresin 7 and curable resin 5 such as thermosetting resin or photosettingresin are filled into a gap 11 between the semiconductor chip 1 and thecircuit board 2.

That is, in the semiconductor device 10 according to the presentinvention, the conductive bump 3 of the semiconductor chip 1 and theconnection pad 6 of the circuit board 2 are arranged in the abovestructure, and they are kept to be connected in contact with each otherby adhesion force of the thermoplastic resin 7 and the curable resin 5.

In the face-down type semiconductor device of the present invention, itis preferable that the thermoplastic resin 7 is located substantially atthe center of the surface of the semiconductor chip 1 and the peripheralportion of the semiconductor chip 1 is sealed by the curable resin 5when the semiconductor chip 1 and the circuit board 2 are adhesivelyattached to each other.

Accordingly, as a preferable mode of the semiconductor device 10according to the present invention, the thermoplastic resin 7 which isused to adhesively join the semiconductor chip 1 and the circuit board 2is filled in the neighborhood of the center portion of the gap 11between the semiconductor chip 1 and the circuit board 2, and thecurable resin 5 for adhesively joining the semiconductor chip 1 and thecircuit board 2 to each other is filled and disposed around thethermoplastic resin 7.

As shown in FIG. 3, an electrically conductive bump 3 is formed at aheight of 20 to 80 μm on the semiconductor chip 1, and the conductivebump 3 of the semiconductor chip is electrically connected to theconnection pad 6 of the circuit board 2 while brought into contact withthe connection pad 6. The thermoplastic resin 7 is adhesively filledinto the substantially center portion of the gap 11 between thesemiconductor chip 1 and the circuit board 2 so as to cover an area of20% to 80% of the total area of the semiconductor chip 1, and theperipheral portion thereof is sealed by the curable resin 5 such asphotocurable or thermosetting resin to form the semiconductor device 10.

Further, in another embodiment of the semiconductor device 10 of thepresent invention, as shown in FIG. 2, solder 4 is beforehand suppliedon the external connection pad 6 of the circuit board 2 to couple theconductive bump S of the semiconductor chip 1 and the externalconnection pad 6 of the circuit board 2 through the solder 4.

In this embodiment of the semiconductor device 10 of the presentinvention, it is preferable that the glass transition point of thethermoplastic resin 7 which is located substantially at the center ofthe semiconductor chip 1 is set to be higher than the melting point ofthe solder 4.

As shown in FIG. 4, an electrically conductive bump 3 is formed at aheight of 20 to 80 μm on the semiconductor chip 1 and further solder 4is applied at a thickness of 10 to 30 μm on the connection pad 6 of thecircuit board 2. The conductive bump 3 of the semiconductor chip 1 iselectrically connected to the connection pad 6 of the circuit board 2through the solder 4, and the thermoplastic resin 7 is adhesively filledat the center of the gap 11 between the semiconductor chip 1 and thecircuit board 2 so as to cover an area ranging from 20% to 80% of thetotal area of the semiconductor chip 1, and the peripheral portionthereof is sealed by the curable resin 5 such as photocurable orthermosetting resin to form the semiconductor device 10.

Next, a method of manufacturing the semiconductor device according tothe present invention will be described.

The method for manufacturing such a semiconductor device as shown inFIG. 3, wherein the semiconductor chip 1 is mounted on the circuit board2 by a face-down method, comprises a step of putting at thesubstantially central portion of a circuit board 2 a thermoplastic resinmember 7 whose amount is set so as to cover a desired area of asubstantially central portion of a semiconductor chip 1, a step ofpositioning a conductive bump 3 of the semiconductor chip 1 and aconnection pad 6 of the circuit board 2 so that the conductive bump andthe connection pad are positionally coincident with each other, a stepof heating the semiconductor chip 1 to melt the thermoplastic resinmember 7 and pressing the semiconductor chip 1 to the circuit board 2 toelectrically connect the circuit board 2 and the semiconductor chip 1 toeach other, and a step of filling curable resin 5 into a space having nothermoplastic resin filled therein in the gap 11 between the circuitboard 2 and the semiconductor chip 1 and supplying suitable energy tothe curable resin 5 to cure the curable resin 5.

Further, in the semiconductor device manufacturing method according tothe present invention, when the semiconductor chip 1 is mounted on thecircuit board 2 having the connection pad 6 coated with the solder 4 bythe face-down method, that is, when manufacturing such a semiconductordevice as shown in FIG. 4, the semiconductor device manufacturing methodmay comprise a step of putting at the substantially central portion ofthe circuit board 2 a thermoplastic resin 7 whose amount is set so as tocover a desired area at the substantially central portion of thesemiconductor chip 1, a step of positioning the conductive bump 3 of thesemiconductor chip 1 and the connection pad 6 of the circuit board 2which is coated with the solder 4 so that the conductive bump 3 and theconnection pad 6 are positionally coincident with each other, a step ofheating the semiconductor chip 1 to melt the thermoplastic resin member7 and the solder 4 coated on the connection pad 6 and pressing thesemiconductor chip 1 so that the circuit board 2 and the semiconductorchip 1 are electrically connected to each other through the solder 4,and a step of filling the curable resin 5 into a space having nothermoplastic resin 7 filled therein in the gap 11 between the circuitboard 2 and the semiconductor chip 1 and supplying suitable energy tothe curable resin 5 to harden the curable resin 5.

In the present invention, any resin may be used as the curable resininsofar as it is normally liquid and it is curable when it is suppliedwith suitable energy such as thermal energy, light energy or the like.

Further, in the present invention, as the thermoplastic resin ispreferably used resin which has a melting point below 300° C. or less orhas a glass transition point of 230° C. or less.

Any shape may be used as the shape of the thermoplastic resin member 7insofar as a predetermined amount of the resin can be located at apredetermined position, for example, it may be shaped in the form offilm, drop of liquid, sphere, particle or the like.

Next, the method of manufacturing the semiconductor device 10 accordingto the first embodiment of the present invention shown in FIG. 3 will bedescribed in the order of steps with reference to FIGS. 5A to 5D.

In FIGS. 5A to 5D, the conductive bump 3 is formed on the semiconductorchip 1, and the thermoplastic resin film 7 is put at the substantiallycentral portion of the semiconductor chip mount portion of the circuitboard 2. At this time, the thickness of the thermoplastic resin film 7is set to be equal to or larger than the height of the conductive bump 3which is formed on the semiconductor chip 1.

The positioning of the conductive bump 3 of the semiconductor chip 1 andthe external connection pad 6 of the circuit board 2 is performed.

As shown in FIG. 5C, after the positioning, the semiconductor chip 1 isheated to a temperature higher than the melting point of thethermoplastic resin film 7, and the semiconductor chip 1 is pressedagainst the circuit board 2, whereby the thermoplastic resin film 7 isheated and melted. Thereafter, the thermoplastic resin 7 is cooled untilit is solidified while the semiconductor chip is pressed. In this step,the semiconductor chip 1 and the circuit board 2 are adhesively attachedto each other by the thermoplastic resin 7, and the conductive bump 3and the external connection pad 6 of the circuit board 2 areelectrically coupled to each other while pressed against each other.

Thereafter, the semiconductor device 10 thus formed is subjected to thecheck test in the above state. If the semiconductor device 10 is judgedas one having a defective semiconductor chip 1, the semiconductor chip 1is heated to a temperature higher than the melting point of thethermoplastic resin 7 to remove the defective semiconductor chip, andthen the thermoplastic resin attached onto the circuit board 2 isremoved while heated.

The above operation is repeated. If the semiconductor device 10 isjudged as a good product through the check test in the state of FIG. 5C,for example, the liquefied thermosetting resin 5 is filled into an areahaving no thermoplastic resin in the space which is formed by thesemiconductor chip 1 and the circuit board 2 as shown in FIG. 6D, andthen the thermosetting resin 5 is cured.

The manufacturing method of the first embodiment according to thepresent invention will be described in more detail.

Referring to FIG. 5A, the conductive bump 3 on the semiconductor chip 1is formed to have a bump diameter 60 to 100 μm and a bump height of 40to 65 μm by the gold ball bump method. A solder bump based on theplating method may be used as the conductive bump.

Subsequently, referring to FIG. 5B, the thermoplastic resin film 7 isput on the substantially central portion of the circuit board 2 on whichthe semiconductor chip 1 is mounted. A polyether amide film is used asthe thermoplastic resin film 7. When the size of the semiconductor chip1 is equal to 10 mm in square, the polyether amide film is cut out at asize of 3 to 5 mm in square. The film thickness of the polyether amidefilm is set to be larger than the height of the conductive bump by 5 μm.

Accordingly, when the bump is formed by the gold ball bump method, thefilm thickness of the polyether amide film is set to 45 to 70 μm.Subsequently, the gold ball bump 3 of the semiconductor chip 1 and theexternal connection pad 6 of the circuit board 2 are positioned to bepositionally coincident with each other, and then the semiconductor chipis heated to 280° C. and pressed against the circuit board 2 from theupper side of the polyether amide film to melt the polyether amide filmto temporarily fit the semiconductor chip 1 and the circuit board 2 toeach other.

Thereafter, the press is stopped when the chip temperature is reduced to200° C. or less. The press force at this time is set to 30 g/bump. Thecheck test is performed on the semiconductor device thus formed, and ifthe semiconductor chip is judged as a defective one, it is heated to 240to 300° and removed. If it is judged as a good semiconductor chipthrough the check test, liquid epoxy resin is filled from the peripheryof filled from the periphery of the semiconductor chip into a spacewhere no polyether amide resin is filled, by using a dispenser. After adefoaming process is performed under vacuum, the result is treated at100° C. for 2 hours and 150° C. for 2 hours to harden the epoxy resin.

Next, the method of manufacturing the semiconductor device 10 accordingto the second embodiment of the present invention shown in FIG. 4 willbe described in the order of steps with reference to FIGS. 6A to 6D

In this manufacturing method, in order to stabilize the electricalcoupling of the conductive bump 3 formed on the semiconductor chip 1 andthe external connection pad 6 of the circuit board 2, the solder 4 issupplied onto the external connection pad 6 of the circuit board 2 asshown in FIGS. 6A to 6D. When the semiconductor chip 1 is heated andpressed against the circuit board 2 as shown in FIG. 6C, the heatingtemperature of the semiconductor chip 1 is set to be higher than themelting temperature of the thermoplastic resin film 7. Further, in thiscase, the heating temperature of the semiconductor chip 1 is also set tobe higher than the melting point of the solder 4 on the externalconnection pad 6 of the circuit board 2, so that both the thermoplasticresin and the solder are melted to perform the coupling operation.

The manufacturing method of the second embodiment according to thepresent invention will be described in more detail.

Referring to FIG. 6A, the conductive bump 3 on the semiconductor chip 1is formed to have a bump diameter 60 to 100 μm and a bump height of 40to 65 μm by the gold ball bump method. A solder bump based on theplating method may be used as the conductive bump.

Subsequently, referring to FIG. 6B, the thermoplastic resin film 7 isput on the substantially central portion of the circuit board 2 on whichthe semiconductor chip 1 is mounted. A polyether amide film is used asthe thermoplastic resin film 7. When the size of the semiconductor chip1 is equal to 10 mm in square, the polyether amide film is cut out at asize of 3 to 5 mm in square. The film thickness of the polyether amidefilm is set to be larger than the height of the conductive bump by 5 μm.

Accordingly, when the bump is formed by the gold ball bump method, thefilm thickness of the polyether amide film is set to 45 to 70 μm.Further, tin-silver solder is applied to the connection pad 6 of thecircuit board 3 at a thickness of 10 to 30 μm. Subsequently, the goldball bump 3 of the semiconductor chip 1 and the external connection pad6 of the circuit board 2 are positioned to be positionally coincidentwith each other, and then the semiconductor chip is heated to 240 to300° C. and pressed against the circuit board 2 from the upper side ofthe polyether amide film to melt the polyether amide film. The polyetheramide film 7 is melted, the sold ball bump 3 is brought into contactwith the solder 4 on the connection pad 6 of the circuit board 2, andthe tin-silver solder 4 is melted to temporarily fit the semiconductorchip 1 and the circuit board 2 to each other.

Thereafter, the press is stopped when the chip temperature is reduced to200° C. or less. The press force at this time is set to 10 to 50 g/bump.The check test is performed on the semiconductor device thus formed, andif the semiconductor chip is judged as a defective one, it is heated to240 to 300° C. and removed. If it is judged as a good semiconductor chipthrough the check test, liquid epoxy resin is filled from the peripheryof the semiconductor chip into a space where no polyether amide resin isfilled, by using a dispenser. After the vacuum-defoaming process, theresult is treated at 100° C. for 2 hours and 150° C. for 2 hours toharden the epoxy resin.

The semiconductor device and the semiconductor device manufacturingmethod according to the present invention adopt the above-describedtechnical construction, and thus they have the following effects.

As a first effect, the semiconductor chip is temporarily fitted to thecircuit board by the thermoplastic resin, and thus at this time thecheck test can be performed on the semiconductor device. Therefore, ifthe semiconductor device is judged as one having a defectivesemiconductor chip, the chip can be easily removed. This is because thesemiconductor chip and the circuit board are temporarily fitted to eachother, however, the thermoplastic resin is easily melted by re-heatingso that the semiconductor chip is removed.

As a second effect, the thermoplastic resin is provided at the center ofthe semiconductor chip for adhesion. Therefore, no void occurs in theresin with which the semiconductor chip is sealingly connected to thecircuit board at the center of the semiconductor chip, so thatreliability of the semiconductor device is enhanced. This is becausethere is no solvent or monomers of low molecular weight based on thecurable resin such as epoxy resin at the area corresponding to thecenter of the semiconductor chip.

As a third effect, when the conductive bump of the semiconductor chipand the connection pad of the circuit board are connected to each otherby the solder, no crack occurs in the solder and thus the connection canbe performed with high reliability. This is because when the conductivebump of the semiconductor chip and the connection pad of the circuitboard are connected to each other by the solder, the semiconductor chipand the circuit board are also adhesively attached to each other by thethermoplastic resin at the same time, so that the stress can bemoderated and the connection reliability can be enhanced.

What is claimed is:
 1. A face-down mount type of semiconductor device inwhich an external connection pad of a circuit board and a conductivebump of a semiconductor chip are coupled to each other, characterized inthat thermoplastic resin and curable resin are filled in a gap betweensaid semiconductor chip and said circuit board, said conductive bump ofsaid semiconductor chip and said external connection pad of said circuitboard are connected to each other through solder, wherein the glasstransition point of said thermoplastic resin is higher than the meltingpoint of said solder.
 2. The face-down mount type of semiconductordevice as claimed in claim 1, wherein said thermoplastic resin toadhesively connect said semiconductor chip and said circuit board toeach other is filled in the neighborhood of a center portion of a gapbetween said semiconductor chip and said circuit board, and said curableresin to adhesively connect said semiconductor chip and said circuitboard to each other is filled around said thermoplastic resin.
 3. A facedown mount type of semiconductor device in which an external connectionpad of a circuit board and a conductive bump of a semiconductor chip arecoupled to each other, a thermoplastic resin and a curable resin arefilled in a gap between said semiconductor chip and said circuit board,said thermoplastic resin covers an area of 20% to 80% of the total areaof the semiconductor chip, said conductive bump of said semiconductorchip and said external connection pad of said circuit board areconnected to each other through solder, wherein the glass transitionpoint of said thermoplastic resin is higher than the melting point ofsaid solder.
 4. The face-down mount type of semiconductor device asclaimed in claim 3, wherein said thermoplastic resin to adhesivelyconnect semiconductor chip and said circuit board to each other isfilled in the area of a center portion of a gap between saidsemiconductor chip and said circuit board, and said curable resin toadhesively connect said semiconductor chip and said circuit board toeach other and is filled around said thermoplastic resin.
 5. Theface-down mount type of semiconductor device as claimed in claim 4,wherein said curable resin to adhesively connect said semiconductor chipand said circuit board to each other is filled in the gap between saidsemiconductor chip and said circuit board so as to surround the externalconnection pad and the conductive bump.